v ds i d (at v gs =10v) 43a r ds(on) (at v gs =10v) < 10m w r ds(on) (at v gs = 4.5v) < 14.5m w symbol v ds drain-source voltage 30 the AON6428 uses advanced trench technology to provide excellent r ds(on) , low gate charge.this device is suitable for use as a high side switch in smps and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v g d s top view 1 2 3 4 8 7 6 5 v ds v gs i dm i ar e ar t j , t stg symbol t 10s steady-state steady-state r q jc max t c =25c 2 12 t c =100c junction and storage temperature range -55 to 150 power dissipation b p d thermal characteristics units maximum junction-to-ambient a c/w r q ja 21 50 25 parameter typ v 20 gate-source voltage drain-source voltage 30 mj avalanche current c 8 a a v t a =25c i dsm a t a =70c 80 pulsed drain current c continuous drain current continuous drain current i d 43 27 t c =25c t c =100c 51 11 45 repetitive avalanche energy l=0.05mh c w power dissipation a p dsm w t a =70c 30 1.3 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3.5 60 4.2 c g d s top view 1 2 3 4 8 7 6 5 www.freescale.net.cn 1/6 AON6428 30v n-channel mosfet general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.2 1.7 2.2 v i d(on) 80 a 8.3 10 t j =125c 12.4 15 11.3 14.5 m w g fs 43 s v sd 0.7 1 v i s 35 a c iss 770 pf c oss 240 pf c rss 77 pf r g 0.4 0.8 1.6 w q g (10v) 14.8 17.8 nc q g (4.5v) 7.1 8.5 nc q gs 2.2 nc q gd 3.1 nc t d(on) 5 ns t 3 ns v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge v ds =5v, i d =20a switching parameters maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time forward transconductance diode forward voltage v =10v, v =15v, r =0.75 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz i s =1a,v gs =0v static drain-source on-resistance m w on state drain current v gs =4.5v, i d =20a m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current i dss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) drain-source breakdown voltage i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a t r 3 ns t d(off) 18 ns t f 3 ns t rr 11 ns q rr 23 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime i f =20a, di/dt=500a/ m s body diode reverse recovery time turn-on rise time v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/6 AON6428 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 7v 10v 4v 4.5v 40 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 0 5 10 15 20 25 30 35 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 7v 10v 4v 4.5v www.freescale.net.cn 3/6 AON6428 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s 40 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s r q jc =4.2 c/w www.freescale.net.cn 4/6 AON6428 30v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure12:singlepulseavalanche capability(note c) 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de-rating (note f) t a =25 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 20 40 60 80 100 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure12:singlepulseavalanche capability(note c) 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de-rating (note f) t a =25 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c t a =150 c t a =100 c t a =125 c r q ja =60 c/w www.freescale.net.cn 5/6 AON6428 30v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l unclamped inductive switching (uis) test circuit & waveforms 2 e = 1/2 li - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AON6428 30v n-channel mosfet
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